Cypress Semiconductor CY7C1422BV18 Manuals

36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture CY7C1422BV18, CY7C1429BV18 CY7C1423BV18, CY7C1424BV18 Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document #: 001-07035 Rev. *D Revised June 16, 2008 Features ■36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36) ■300 MHz clock for high bandwidth ■2-word burst for reducing address bus frequency ■Double Data Rate (DDR) interfaces (data transferred at 600 MHz) at 300 MHz ■Two input clocks (K and K) for precise DDR timing ❐SRAM uses rising edges only ■Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches ■Echo clocks (CQ and CQ) simplify data capture in high-speed systems ■Synchronous internally self-timed writes ■DDR-II operates with 1.5 cycle read latency when the DLL is enabled ■Operates similar to a DDR-I device with 1 cycle read latency in DLL off mode ■1.8V core power supply with HSTL inputs and outputs ■Variable drive HSTL output buffers ■Expanded HSTL output voltage (1.4V–VDD) ■Available in 165-Ball FBGA package (15 x 17 x 1.4 mm) ■Offered in both Pb-free and non Pb-free packages ■JTAG 1149.1 compatible test access port ■Delay Lock Loop (DLL) for accurate data placement Configurations CY7C1422BV18 – 4M x 8 CY7C1429BV18 – 4M x 9 CY7C1423BV18 – 2M x 18 CY7C1424BV18 – 1M x 36 Functional Description The CY7C1422BV18, CY7C1429BV18, CY7C1423BV18, and CY7C1424BV18 are 1.8V Synchronous Pipelined SRAMs, equipped with Double Data Rate Separate IO (DDR-II SIO) architecture. The DDR-II SIO consists of two separate ports: the read port and the write port to access the memory array. The read port has data outputs to support read operations and the write port has data inputs to support write operations. The DDR-II SIO has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common IO devices. Access to each port is accomplished through a common address bus. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 8-bit words in the case of CY7C1422BV18, two 9-bit words in the case of CY7C1429BV18, two 18-bit words in the case of CY7C1423BV18, and two 36-bit words in the case of CY7C1424BV18 that burst sequentially into or out of the device. Asynchronous inputs include an output impedance matching input (ZQ). Synchronous data outputs are tightly matched to the two output echo clocks CQ/CQ, eliminating the need to capture data separately from each individual DDR-II SIO SRAM in the system design. Output data clocks (C/C) enable maximum system clocking and data synchronization flexibility. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. Selection Guide Description 300 MHz 278 MHz 250 MHz 200 MHz 167 MHz Unit Maximum Operating Frequency 300 278 250 200 167 MHz Maximum Operating Current x8 825 775 700 600 500 mA x9 845 775 700 600 500 x18 880 815 740 600 500 x36 980 890 800 665 560 [+] Feedb