Panasonic 2SC4835G Manuals

Transistors 1 Publication date: May 2007 SJC00368AED This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4835G Silicon NPN epitaxial planar type For UHF band low-noise amplification ■Features • Low noise figure NF • High forward transfer gain S21e2 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing ■Absolute Maximum Ratings Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 15 V Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 10 V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 1 µA Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0 1 µA Forward current transfer ratio *1, 2 hFE VCE = 8 V, IC = 20 mA 50 200  Transition frequency fT VCE = 8 V, IC = 15 mA, f = 800 MHz 5 6 GHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 0.7 1.2 pF (Common base, input open circuited) Forward transfer gain S21e2 VCE = 8 V, IC = 15 mA, f = 800 MHz 11 14 dB Maximum unilateral power gain GUM VCE = 8 V, IC = 15 mA, f = 800 MHz 15 dB Noise figure NF VCE = 8 V, IC = 7 mA, f = 800 MHz 1.3 2.0 dB ■Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open) VCEO 10 V Emitter-base voltage (Collector open) VEBO 2 V Collector current IC 80 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE 50 to 100 80 to 130 100 to 200 ■Package • Code SMini3-F2 • Marking Symbol: 3M • Pin Name 1: Base 2: Emitter 3: Collector