Panasonic MA3J1470G Manuals

Switching Diodes 1 Publication date: November 2007 SKF00096AED MA3J1470G Silicon epitaxial planar type For high-speed switching circuits ■Features • Two isolated elements contained in one package, allowing high- density mounting • Two diodes are connected in series in the package ■Absolute Maximum Ratings Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA 1.2 V Reverse voltage VR IR = 100 µA 80 V Reverse current IR VR = 75 V 100 nA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 pF Reverse recovery time * trr IF = 10 mA, VR = 6 V 3 ns Irr = 0.1 IR , RL = 100 Ω ■Electrical Characteristics Ta = 25°C ± 3°C 1 3 2 Bias Application Unit (N-50BU) 90% Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 IF = 10 mA VR = 6 V RL = 100 Ω 10% Input Pulse Output Pulse Irr = 0.1 IR tr tp trr VR IF t t A Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *: trr measurement circuit Note) *: t = 1 s Parameter Symbol Rating Unit Reverse voltage VR 80 V Maximum peak reverse voltage VRM 80 V Forward current Single IF 100 mA Series 65 Peak forward Single IFM 225 mA current Series 145 Non-repetitive peak Single IFSM 500 mA forward surge current * Series 325 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■Package • Code SMini3-F2 • Pin Name 1: Anode1 2: Cathode2 3: Cathode1, Anode2 ■Marking Symbol: MS ■Internal Connection This product complies with the RoHS Directive (EU 2002/95/EC).